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IB0912M500 RF Power Transistor 100% Genuine New

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About the Product

GE IB0912M500 RF Power Transistor

Technical Specifications

Frequency range: 960 MHz to 1.215 GHz

Output power: 500W (pulsed)

Voltage: 50V

Current: 20A

Gain: 13dB typical

Efficiency: 60%

Weight: 0.01kg (10 grams)

Package: Ceramic/metal flange

Key Features

Military-grade reliability

High power density

Gold metallization

Hermetic sealing

Applications

Avionics radar systems

Military communications

Air traffic control

Test equipment

Installation Notes

Requires heatsinking

Proper RF grounding needed

ESD sensitive device

Package Includes

1x IB0912M500 transistor

Mounting hardware

Specification sheet

Shipping & Support

In stock ready to ship

FedEx/UPS/DHL available

RoHS compliant

Export controlled item

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  • Warranty: NexAuto offers a 12-month warranty on all parts purchased from us, in addition to any manufacturer coverage.
  • Returns: 30-day return policy for defective or mismatched parts, ensuring peace of mind.
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  • Custom Calibration: Provide your specifications, and we’ll handle the rest with precision.
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