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GE IB0912M500 RF Power Transistor Technical Specifications Frequency range: 960 MHz to 1.215 GHz Output power: 500W (pulsed) Voltage: 50V Current: 20A Gain: 13dB typical Efficiency: 60% Weight: 0.01kg (10 grams) Package: Ceramic/metal flange Key Features Military-grade reliability High power density Gold metallization Hermetic...
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